Distinguishing the EH₁ and S₁ defects in n-type 4H-SiC by Laplace DLTS

Electrically active point defects in n-type 4H–SiC

An electrically active defect has been observed at a level position of ;0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ;5310 214 cm in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1310 cm. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after elec...

Metastable defects in low-energy electron irradiated n-type 4H-SiC

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC

Using capacitance transient techniques, a bistable center, here called FB-center, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (Ea = EC − 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the tran...

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy